A designed visual geometry group (VGG)-based convolutional neural network (CNN) model with small computational cost and high accuracy is utilized to monitor pulse amplitude modulation-based intensity modulation and direct detection channel performance using eye diagram measurements. Experimental results show that the proposed technique can achieve a high accuracy in jointly monitoring modulation format, probabilistic shaping, roll-off factor, baud rate, optical signal-to-noise ratio, and chromatic dispersion. The designed VGG-based CNN model outperforms the other four traditional machine-learning methods in different scenarios. Furthermore, the multitask learning model combined with MobileNet CNN is designed to improve the flexibility of the network. Compared with the designed VGG-based CNN, the MobileNet-based MTL does not need to train all the classes, and it can simultaneously monitor single parameter or multiple parameters without sacrificing accuracy, indicating great potential in various monitoring scenarios.

Fifteen periods of Si/Si_0.7Ge_0.3 multilayers (MLs) with various SiGe thicknesses are grown on a 200 mm Si substrate using reduced pressure chemical vapor deposition (RPCVD). Several methods were utilized to characterize and analyze the ML structures. The high resolution transmission electron microscopy (HRTEM) results show that the ML structure with 20 nm Si_0.7Ge_0.3 features the best crystal quality and no defects are observed. Stacked Si_0.7Ge_0.3 ML structures etched by three different methods were carried out and compared, and the results show that they have different selectivities and morphologies. In this work, the fabrication process influences on Si/SiGe MLs are studied and there are no significant effects on the Si layers, which are the channels in lateral gate all around field effect transistor (L-GAAFET) devices. For vertically-stacked dynamic random access memory (VS-DRAM), it is necessary to consider the dislocation caused by strain accumulation and stress release after the number of stacked layers exceeds the critical thickness. These results pave the way for the manufacture of high-performance multivertical-stacked Si nanowires, nanosheet L-GAAFETs, and DRAM devices.

The 4H-SiC crystal is found to have great potential in terahertz generation via nonlinear optical frequency conversion due to its extremely high optical damage threshold, wide transparent range, etc. In this paper, optical rectification (OR) with tilted-pulse-front (TPF) setting based on the 4H-SiC crystal is proposed. The theory accounts for the optimization of incident pulse pre-chirping in the TPF OR process under high-intensity femtosecond laser pumping. Compared with the currently recognized LiNbO₃-based TPF OR, which generates a single-cycle terahertz pulse within 3 THz, 4H-SiC demonstrates a significant advantage in producing ultra-widely tunable (up to over 14 THz, TPF angle 31°–38°) terahertz waves with high efficiency (~10^–2) and strong field (~MV/cm). Besides, the spectrum characteristics, as well as the evolution from single- to multi-cycle terahertz pulses can be modulated flexibly by pre-chirping. The simulation results show that 4H-SiC enables terahertz frequency extending to an unprecedent range by OR, which has extremely important potential in strong-field terahertz applications.

Millimeter-wave (mmWave) band (30–300 GHz) is an emerging spectrum range for wireless communication, short-range radar, and sensor applications. mmWave-optic modulators that could efficiently convert mmWave signals into the optical domain are crucial components for long-haul transmission of mmWave signals through optical networks. At these ultrahigh frequencies, however, the modulation performances are highly sensitive to the transmission line loss as well as the velocity- and impedance-matching conditions, while precise measurements and modeling of these parameters are often non-trivial. Here we present a systematic investigation of the mmWave-optic modulation performances of thin-film lithium niobate modulators through theoretical modeling, electrical verifications, and electro-optic measurements at frequencies up to 325 GHz. Based on our experimentally verified model, we demonstrate thin-film lithium niobate mmWave-optic modulators with a measured 3-dB electro-optic bandwidth of 170 GHz and a 6-dB bandwidth of 295 GHz. The device also shows a low RF half-wave voltage of 7.3 V measured at an ultrahigh modulation frequency of 250 GHz. This work provides a comprehensive guideline for the design and characterization of mmWave-optic modulators and paves the way toward future integrated mmWave photonic systems for beyond-5G communication and radar applications.

Integrated lithium niobate (LN) photonics is a promising platform for future chip-scale microwave photonics systems owing to its unique electro-optic properties, low optical loss, and excellent scalability. A key enabler for such systems is a highly linear electro-optic modulator that could faithfully convert analog electrical signals into optical signals. In this work, we demonstrate a monolithic integrated LN modulator with an ultra-high spurious-free dynamic range (SFDR) of 120.04dB·Hz4/5 at 1 GHz, using a ring-assisted Mach–Zehnder interferometer configuration. The excellent synergy between the intrinsically linear electro-optic response of LN and an optimized linearization strategy allows us to fully suppress the cubic terms of third-order intermodulation distortions (IMD3) without active feedback controls, leading to ∼20dB improvement over previous results in the thin-film LN platform. Our ultra-high-linearity LN modulators could become a core building block for future large-scale functional microwave photonic integrated circuits by further integration with other high-performance components like low-loss delay lines, tunable filters, and phase shifters available on the LN platform.

针对超短脉冲光纤放大器模型复杂，计算难度大等问题，提出了一种基于门控循环单元深度学习的脉冲演化预测方法。利用初始脉冲时域和频域信息，分别训练门控循环单元模型，成功地预测了掺铥光纤放大器中脉冲非线性压缩的过程，与数值计算和实验结果匹配。相比于求解非线性薛定谔方程和能级速率方程两个偏微分方程的方法具有更高的运算速度，有利于优化放大器参数，理解超短脉冲在增益光纤中的非线性动力学过程。

Co-TiO₂纳米复合薄膜作为一种新型自旋电子材料, 由于具有良好的生物相容性, 近年来受到广泛关注。但在制备过程中, 磁性金属Co处于氧化气氛, 容易部分氧化, 从而影响薄膜的隧道磁电阻性能。为了抑制磁性金属的氧化, 提高金属态含量, 本研究通过强磁靶共溅射法制备了Co-TiO₂纳米复合薄膜。该方法采用的强磁靶头, 磁场强度高、分布均匀, 可以提高溅射粒子的能量和溅射速率, 降低因高能粒子碰撞而发生氧化的概率。因此强磁靶共溅射法能明显抑制金属Co的氧化, 提高纳米复合薄膜的自旋极化率。所制备的Co-TiO₂纳米复合薄膜主要由非晶态的TiO₂基体和分散其中的Co颗粒组成。通过调节金属Co颗粒尺寸和分布状态, 在电学上实现了金属态向绝缘态转变, 在磁学上实现了铁磁性向超顺磁性转变。Co含量为51.3at%时, Co-TiO₂纳米复合薄膜表现为高金属态和高电阻率, 并且实现了高达8.25%的室温隧道磁电阻。强磁靶共溅射法使Co-TiO₂纳米复合薄膜的室温磁电阻性能得到了进一步提高, 这对于磁性金属—氧化物纳米复合薄膜的研究有着重要的意义。